发明名称 |
Semiconductor integrated circuit having a DRAM cell unit and a nonvolatile cell unit |
摘要 |
A high density nonvolatilized semiconductor integrated circuit is comprised of a Dynamic RAM (DRAM) cell unit and a nonvolatile cell unit. The DRAM cell unit is comprised of a first transistor having its gate connected to a word line, its source connected to a bit line and its drain connected to a first capacitor. The first capacitor has its other electrode connected to a first line. The nonvolatile RAM cell unit is comprised of a second transistor having its gate connected to a second line, its source connected to the bit line and its drain connected to a second capacitor. The second capacitor has its other electrode connected to a third line. The second capacitor comprises a ferroelectric substance to which a reverse voltage is applied in order to read out its signal, and the first capacitor comprises a paraelectric substance to which such reverse voltage is not applied. The cycle life of the DRAM cell unit is thereby increased. Further, the composition of the integrated circuit having a smaller number of constituent elements allows high-density circuit formation.
|
申请公布号 |
US5250827(A) |
申请公布日期 |
1993.10.05 |
申请号 |
US19910717409 |
申请日期 |
1991.06.18 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
INOUE, NAOTO;TOYAMA, MOTOO;TAKAHASHI, HIROSHI;KINBARA, MASAHIKO |
分类号 |
G11C11/22;G11C14/00;(IPC1-7):H01L29/68 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|