发明名称 TOOL FOR HEAT-TREATMENT OF SEMICONDUCTOR WAFER AND ITS PRODUCTION
摘要 <p>PURPOSE:To provide a tool for the heat-treatment of semiconductor wafers and its production process to enable the treatment of a large-sized semiconductor wafer and a number of wafers at the same time and giving a treated product having excellent heatresistance and high purity without causing the contamination of the semiconductor wafer at a high temperature. CONSTITUTION:The objective tool for the heat-treatment of semiconductor wafers is composed of a synthetic quartz glass having an OH concentration of <=200ppm, a Cl concentration of >=20ppm and a viscosity of >=1.0X10<13> poise at 1200 deg.C. The tool can be produced by hydrolyzing a silicon chloride in an oxyhydrogen flame to form a porous glass having a specific gravity of 0.4-0.6g/cm<3> and composed of glass particles having an average particle diameter of <=0.4mum and heat-treating the porous glass at 1000-1500 deg.C in hydrogen atmosphere.</p>
申请公布号 JPH05254859(A) 申请公布日期 1993.10.05
申请号 JP19920053515 申请日期 1992.03.12
申请人 发明人
分类号 H01L21/324;C03B8/04;C03B19/14;C03B20/00;H01L21/22;H01L21/673;(IPC1-7):C03B20/00;H01L21/68 主分类号 H01L21/324
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