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发明名称
INSULATED GATE TYPE FET ON SOI STRUCTURE
摘要
申请公布号
KR930009478(B1)
申请公布日期
1993.10.04
申请号
KR19900005880
申请日期
1990.04.26
申请人
FUJITSU LTD.
发明人
KOTOU, HIROSHI
分类号
H01L27/12;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L29/784
主分类号
H01L27/12
代理机构
代理人
主权项
地址
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