| 摘要 |
For fabricating a impurity region of semiconductor device for forming a source and drain symmetrically by auto doping, the method includes the steps of forming a gate, a polysilicon layer and a protection layer on a semiconductor substrate successively, forming a gate electrode by selective etching the protection layer, the polysilicon layer and the gate oxide, depositing an insulating layer on the side of the gate electrode, forming a doped polysilicon sidewall on the wide of the gate electrode, forming a highly doped impurity region and a lightly doped impurity region by ion implantation of impurity and annealing. Symmetrical source and drain are formed by forming a lightly doped impurity region by auto doping.
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