| 摘要 |
The long term stability and reliability of thin film capacitors incorporated in silicon integrated circuits is enhanced by using a composite dielectric consisting of an initial layer of SiO2 formed on the substrate by thermal oxidation followed by a layer of Si3N4 formed by thermal decomposition of a silane-ammonia-hydrogen mixture on a substrate heated to 800-1150 degrees C. The layers are etched to form windows for diffusion of circuit elements into the substrate followed by formation of further SiO2 layers overall in which a window is formed for application of a metallic counter electrode to the silicon nitride surface. |
