| 摘要 |
The method of fabricating an insulating gate type field effect transistor for preventing damage of gate oxide in the process for forming a gate is disclosed. First, an insulating layer is deposited on a substrate, and a polysilicon layer and a gate insulating layer are formed on the insulating layer. And a gate is formed by patterning the gate insulating layer and polysilicon. Then, impurity is ion implanted with low concentration and oxide is formed on the side of the gate by annealing under the oxigen ambient. And impurity is ion implanted with high concentration, and insulating layer is formed on the resultant, and a contact hole is formed by selective etching the insulating layer. A metal electrode is formed on the predetermined portion. Leakage current is reduced, and damage of the junction of the source and drain is prevented.
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