| 摘要 |
A voltage regulating diode which comprises a semiconductor substrate (W); a highly doped source region (3) adjacent to the surface in the substrate (W); a highly doped drain region (D) adjacent to its surface in the aforesaid substrate (W); a source electrode (4) in contact with the source region (3); a shortcircuit electrode (9) in contact with the drain region (D); a gate insulation part (8a) formed to partly cover the surface of the substrate (W) between the source region (3) and the drain region (D); and a gate electrode (10) formed to cover this gate insulation part (8a). Then, the gate electrode (10) is shortcircuited to the drain region (D) through the shortcircuit electrode (9). As a result, when a gate voltage which is higher than a predetermined threshold value is impressed, a channel (12) is formed in the substrate (W) to electrically connect the source region (3) and the drain region (D). |
