发明名称 A HIGH FREQUENCY VOLTAGE MULTIPLIER FOR AN ELECTRICALLY ERASABLE AND PROGRAMMABLE MEMORY DEVICE
摘要 <p>A charge pump (10) has a chain of diode connected MOS transistors (12a-12i) to generate a high voltage output (Vout). Each of the serially connected MOS transistor (12a-12i) has a capacitor (20a-20i) with one end connected to the input of one of the transistors. A ring oscillating circuit receives an enable signal (ENABLE) and generates a plurality of oscillating signals. Each oscillating signal has the same frequency and is supplied to the second end of a capacitor (20a-20i). Between each capacitor (20a-20i) the ring oscillating circuit has an inverter (22a-22i) which inverts the supplied oscillating signal. Thus, immediately adjacent capacitors are provided with an inverse oscillating signal. In this manner, the charge pump (10) can be operated at a high frequency, drawing smoother current from the power supply, with greater capacitive loading distributed unto each stage of the oscillator. Finally, breakdown prevention needs only be applied to the anode of the last diode (12i).</p>
申请公布号 WO1993019530(A1) 申请公布日期 1993.09.30
申请号 US1993001659 申请日期 1993.02.24
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