Method for improving the interface characteristics of CaF2 on silicon.

摘要

In one form of the invention, a method is disclosed for growing CaF2 on a silicon surface, comprising the steps 16 of maintaining the silicon surface at a first temperature below approximately 500 DEG C, 14 starting a deposition of CaF2 on the silicon surface, stopping the deposition, and then 18 annealing the CaF2 in forming gas at a temperature below 600 DEG C. Other devices, systems, and methods are also disclosed.