Semiconductor devices with p-n-junction -produced by forming - unsatd oxide or fluoridelayer

摘要

Device with p-n junction is made by producing layer of unsatd. oxide or fluoride material under controlled conditions on prepd. surface of semiconductor substrate, layer having such thickness and degree of unsaturation that "forming process" can occur, and depositing metal coating on this layer. "Forming" is produced by certain unsatd. thin oxide or fluoride films, esp. unsatd. Si oxide (SiOx). If potential is applied across film sandwiched between 2 conducting layers, film changes irreversibly from insulating to conducting state (see Brit. Pat. applcn. 55787/67). Prodn. can be used as surface barrier radiation sensing device/detector; field effect transistor; and in equipment with p-Si substrate and n-zone with highly doped n-region forming source and drain contifgurations. Input and source/drain capacity are low, allowing operation of field effect transistors at U.H.F. frequencies, and gate thermal diffusion is avoided.