发明名称 Device for generating reference voltages.
摘要 <p>A device for generating reference voltages includes: a first transistor T1 placed between a positive voltage source Vc and an output 1 of the generation stage having its gate biased to a first potential V1; at least one second T2 and one third T3 transistors in parallel, identical to the first one T1, each having its gate biased to a potential respectively V2 and V3 and being mounted in series with a respective switching transistor between the output 1 of the generation stage and earth; a chain of resistors in series R1 to R4 between the positive voltage source Vc and earth for delivering the various potentials V1, V2, V3 for biasing the gates of the transistors; logical means 100 for turning on a single defined switching transistor at a time, for generating a defined voltage level on the output 1 of the generation stage. &lt;IMAGE&gt;</p>
申请公布号 EP0562916(A1) 申请公布日期 1993.09.29
申请号 EP19930400689 申请日期 1993.03.17
申请人 SGS-THOMSON MICROELECTRONICS S.A. 发明人 YERO, EMILIO, CABINET BALLOT-SCHMIT
分类号 G05F1/648;G05F3/24;G11C5/14 主分类号 G05F1/648
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