SURFACE-EMISSION TYPE LIGHT-EMITTING DIODE

摘要

PURPOSE:To expand reflected wavelength range of reflected light from a light reflecting layer to avoid the generation of a wavelength range where the reflectance declines partially. CONSTITUTION:A surface-emission type light-emitting diode has thickness- varying sections 34 and 36 in which the thickness of a unit semiconductor which is formed by joining two semiconductors having different compositions continuously vary with a specific change width. This light-emitting diode has also a constant thickness section 32 comprising a plurality of unit semiconductors having a reference thickness T to form a light reflecting layer 14c. The film thickness of a unit semiconductor in the constant thickness section 32 is decided appropriately by taking consideration of a wavelength range of low reflectance in the light reflecting layer consisting of only the thickness varying sections 34 and 36. It is desirable that more than four semiconductors are formed. However, even only one layer can prevent the decline of the reflectance.