| 摘要 |
PURPOSE:To make the film-thickness distribution of a thin film uniform by a method wherein a vacuum container is used as a pressure region in which the vapor-phase reaction of reaction-gas molecules is not caused and the temperature, on a vacuum-side exposed wall, which can maintain the vapor pressure of a partial pressure or higher in a vapor phase is set as a lower limit and the temperature, on the vacuum-side exposed wall, which is lower than a substrate temperature is set as an upper limit. CONSTITUTION:The pressure inside a vacuum container is set in such a way that the mean free path (d) of molecules contained in a reaction gas becomes (d)>L so as to be longer than the shortest distance L between a substrate 9 and the vacuum-side exposed wall of the vacuum container 1. The substrate is set to a temperature (Tsub) at which the reaction gas is decomposed and reacted substantially. In addition, the temperature (Twall) on the vacuum-side exposed wall of the vacuum container is set so as to be higher than the temperature (Tvap) which can maintain the same vapor pressure as the partial pressure of the molecules contained in the reaction gas and so as to be a temperature which is lower than the temperature (Tsub) of the substrate (Tvap<Twall<Tsub). Thereby, the molecules in the supplied reaction gas are scattered without being adsorbed to the inner wall of the vacuum container. |
