| 摘要 |
PURPOSE:To obtain a resolution of <=0.5mmu by using the photo-sensitive agent obtained by reaction of a specified compound with 1,2-naphthoquinonediazido-5- and/or -4-sulfonylchloride. CONSTITUTION:The positive type photoresist composition contains the photosensitive agent obtained by reaction of the compound represented by formula I with the 1,2-naphthoquinonediazido-5 and/or -4-sulfonylchloride and an alkali- soluble resin. The photoresist pattern is obtained by dissolving this composition in a solvent, filtering it, coating a substrate of a silicon wafer or the like by a spin coater or the like, after drying it, exposing it through a prescribed mask, and developing it with a developing solution like an aqueous inorganic alkaline solution containing NaOH, KOH, Na2CO3, or K2CO3, or the like or an aqueous solution of organic alkali, such as tetramethylammonium hydroxide, trimethanolamine, or triethanolamine, or the like. |
