VAPOR SILICON EPITAXIAL GROWTH DEVICE,申请号JP19920042633-传众专利搜索

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发明名称	VAPOR SILICON EPITAXIAL GROWTH DEVICE
摘要
申请公布号	JPH05251359(A)	申请公布日期	1993.09.28
申请号	JP19920042633	申请日期	1992.02.28
申请人	NEC CORP	发明人	SUZUKI TATSUYA
分类号	H01L21/205;C30B25/14;H01L21/31;(IPC1-7):H01L21/205	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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