| 摘要 |
The present invention relates to the protection of a semiconductor active device from thermal breakdown without actually measuring the temperature of the semiconductor active device. Instead, the present invention measures the magnitude of the forward electrical signal generated by the active device and the reflected electrical signal resulting from the interaction of the forward electrical signal and a load. The thermal energy generated by the active device is a function of these electrical signals. The generated thermal energy is transferred out of the active device at a predetermined rate. The temperature of the active device is calculated as a function of the thermal energy generated by the active device and the amount of thermal energy transferred out of the active device. When the calculated temperature is above a predetermined value, the active device is shut off, thereby preventing further generation of thermal energy.
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