| 摘要 |
<p>PURPOSE:To obtain a thin-film transistor free of bending or cracking of a semiconductor layer by terminating a dangling bond through halogens bigger and heavier than hydrogen. CONSTITUTION:The title apparatus is provided, on a transparent glass substrate 1, with a gate electrode 12, gate-insulating layers 14, 16 covering the gate electrode, a semiconductor layer 18 facing the gate 12 via the gate insulating layers 14, 16, and a channel protective layer 20 covering at least a part of the semiconductor layer 18. Further, the semiconductor layer 18 is composed of amorphous silicon and the channel protective layer 20, of nitrogen and silicon and a fluorine compound has been added to the layers, and a dangling bond is terminated when halogens are added to the semiconductor layer 18 and channel protective layer 20. Therefore, when the dangling bond is terminated by halogens bigger and heavier than hydrogen, it is possible to prevent the occurrence of bending and cracking of the semiconductor layer occurring in the case of terminating the dangling bond mainly by hydrogen.</p> |
