| 摘要 |
PURPOSE:To achieve an LED in which the luminance of shortwave length light is 1cd or above, by using a eutectic alloy forming means for joining of LED wafers, semiconductor light emitting devices, together. CONSTITUTION:In a wafer 36 of GaAs red LED, a semiconductor light emitting device, a light emitting layer is made of an n-GaAsP epitaxial crystal growth layer 25 and a p-GaAsO epitaxial crystal growth layer 26 which are grown and laminated on an n-GaAsP epitaxial crystal growth layer 34. In a wafer 35 of Gap green LED, another semiconductor light emitting device, a light emitting layer is made of an n-GaP epitaxial crystal growth layer 29 and a p-GaAsP epitaxial crystal growth layer 30 which are formed and laminated on an n-GaP photo semiconductor epitaxial crystal growth layer 33. Then, the GaAsP red LED wafer 36 and the GaP green LED wafer 35 are forwardly joined together by the use of a eutectic alloy. The semiconductor light emitting device chip thus becomes an LED of an intermediate color between red and green. |
