| 摘要 |
PURPOSE:To improve characteristics, and to promote the application of a superconducting technique to an electronic device by constituting the oxide superconductor crystals of single crystals, which simultaneously grow and form one oxide superconducting thin-film and mutually having the crystalline directions different at a fixed angle, as first and second superconducting regions. CONSTITUTION:The half of the film forming surface of an MgO (100) substrate 5 is wet-etched to form a stepped section 53. The spaces of the crystal lattice of an MgO crystal exposed to a surface in a wet-etched region 52 are changed more than a region 51 not wet-etched so as to allow the growth of a thin-film having a different crystal orientation on the region 52. When Ar ions are applied at an angle as small as possible from the side of the region 51, the substrate 5 is thermally treated in a vacuum and a Y1 Ba2Cu3O7-x oxide superconducting thin-film 1 extending over the regions 51, 52 is formed, the (a) axis and (b) axis of a crystal are displaced mutually at 45 deg. in a growing section 11 on the region 51 and a growing section 12 on the region 52, and a crystal grain boundary 3 functions as a barrier.
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