发明名称 OPENING METHOD OF INSULATING FILM
摘要 PURPOSE:To form a roundness at the shoulder portion of an insulating film made of polyimide resin or the like coated on a substrate by perforating an opening perpendicular to the substrate when forming the opening in the insulating film, bringing hydrazine hydrate aqueous solution into contact with the film and heat treating it at predetermined temperature. CONSTITUTION:Prepolymer solution of polyimide resin or polyimide isoindole quinazolinedione resin or the like is rotarily coated on a substrate 1, is baked at 200 deg.C for 60min to form a resin film 2 thereon. Then, a mask made of Mo having predetermined opening is formed on the film 2, and with this mask an opening 4 substantially perpendicular with respect to the substrate 1 with the shoulders also being perpendicular thereto is formed on the substrate 1 by an O2 sputtering process. Thereafter, the Mo mask is removed, the substrate 1 is dipped in 40-60% by volume of hydrazine hydrate aqueous solution for 1-40min, is pulled up from the solution, baked at 200-450 deg.C to form roundness at the shoulders of the opening 4. The reaction layer 5 on the surface formed at this time is again returned to polyimide by the later heat treatment to eliminate the side-effects thereto.
申请公布号 JPS55150231(A) 申请公布日期 1980.11.22
申请号 JP19790058142 申请日期 1979.05.14
申请人 HITACHI LTD 发明人 SAIKI ATSUSHI;MUKAI KIICHIROU
分类号 H01L21/302;H01L21/306;H01L21/3065;(IPC1-7):01L21/306 主分类号 H01L21/302
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