| 摘要 |
1,271,121. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 1 Oct., 1969 [1 Oct., 1968], No. 48314/69. Heading H1K. In a method for providing conductive paths on an insulating layer 9 on a semi-conductor body 1 and contacts in apertures in that layer on the body a metal foil 10 is laid on the surface of the body and an electron beam 11 is guided over the foil to cut out portions of the foil and precipitate these cut-out portions into the surface of the insulating layer to form conducting paths 12 or alloy parts into the body at the apertures in the insulating layer to form contacts 13, 14. Those parts of the foil which are not utilized are later removed. The conducting paths may also be resistance paths and the contacts may be ohmic or barrier layer contacts. The electron beam may be controlled by a preprogrammed computer to provide conducting paths and contacts for an integrated circuit. The foil 10 may be of aluminium or gold and have a thickness of from 25 Ám to 50 Ám. |
