| 摘要 |
PURPOSE:To obtain an X-ray mask which is free from stress strain between its absorber pattern and transmissive film and the absorber pattern of which can be easily corrected. CONSTITUTION:The title mask is provided with an X-ray transmitting film having such a two-layer structure that the texture of the lower-layer film (SiC) is denser than the upper-layer film (SiO2) and an X-ray absorber pattern formed by filling up a trench pattern formed into the upper-layer film with an X-ray absorber. Then the manufacturing method of the mask is constituted of a process in which the lower- and upper-layer X-ray transmitting films 2 and 9 are successively formed, process in which a substrate 1 is etched off from its rear surface within the extent of a mask supporting frame 3 after sticking the frame 3 to the rear surface of the substrate 1, process in which the trench pattern 8 is formed by patterning the film 9, and process in which the X-ray absorber pattern is formed by filling up the trench pattern 8 with the X-ray absorber. |
