发明名称 |
Method of forming an antifuse |
摘要 |
An antifuse (42) is formed by forming a layer of titanium tungsten (34) overlying a portion of a first metal layer (28). The titanium tungsten layer (34) is oxidized to form a film of oxide (36) on its surface. Insulating regions (30) are formed adjacent the titanium tungsten layer (34) and overlying the first metal layer (28). A second metal layer (40) is formed overlying the titanium tungsten layer (34). Applying a break down voltage across the first and second metal layers (28), (40) will break down the oxide film (36), thereby causing a connection between the first and second metal layers (28), (40).
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申请公布号 |
US5248632(A) |
申请公布日期 |
1993.09.28 |
申请号 |
US19920953641 |
申请日期 |
1992.09.29 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TUNG, YINGSHENG;MONTGOMERY, SCOTT |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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