| 摘要 |
PURPOSE:To attain a large particle diameter and excellent characteristics of an amorphous phase, to reduce localized level density and to enhance carrier mobility by incorporating a microcrystal phase having a prescribed particle diameter into a film in a prescribed volume ratio. CONSTITUTION:A substrate 8 is put on a heater 7 in a reaction chamber 1 and this chamber 1 is evacuated to <=1Pa with an evacuating system 6. Gaseous SiH4 as starting material is introduced into the chamber 1 from a part 5 and fine Si particles of 50-1,000Angstrom particle diameter are also introduced from a port 4 with hydrogen as carrier gas. The degree of vacuum is then regulated to about 100 Pa with the evacuating system 4, high frequency generated from a high-frequency power source 3 is introduced into the chamber 1 through an electrode 2 and glow discharge is caused to form a semiconductor film contg. 5-80vol.% microcrystal phase having 50-1,000Angstrom particle diameter on the substrate 8. |
