| 摘要 |
PURPOSE:To accommodate to heighten the integration of semiconductor devices by carbonization treating after a raw material resin is molded in a desired shape and is hardened. CONSTITUTION:The phenol base, furan base or polyimde base raw material resin having >=40% actual carbon ratio is molded in the desired shape and is heated to 100-180 deg.C to harden. The resin molded body is packed into a graphite crucible or is insertedly held between graphite plates and is carbonization treated by heating to 800-1500 deg.C in an inert gas atmosphere and the carbon member of ion implanting device made of a vitreous carbon having >=1.47 specific gravity, <=5ppm total ash, <=10ppm sulfur content, <=20mum size of a pore contained and <=5% pore content is obtained. |
