| 摘要 |
PURPOSE:To enable mounting of gate and drain leading electrodes upside down in a field effect transistor by securing the gate and drain leading electrodes in a heat sink onto the electrodes on a dielectric substance with solder by a thermal compression process with a source electrode. CONSTITUTION:Solder is placed and molten on the end of input/output electrodes 17 and 18 to amount an element. The amount of solder is regulated suitably by the interval between the gate and the drain leading electrodes and the electrodes 17, 18 or area of the leading electrodes. Then, a chip is mounted upside down thereon. At this time source electrode 122 is secured to a stud 15 by a thermal compression process, and the leading electrodes are soldered with solder 21. |
