| 摘要 |
The method for forming NPN transistor and an I2L device on the same chip grows an oxide film of some hundred angstrom thickness on an epitaxial layer (31) of the I2L device to deposit nitride on the oxide film and remove the nitride by a common photo-etching method and then grows a thick oxide film (33) of some thousand angstroms. Subsequently, the nitride (32) and the oxide film (33) are etchingly removed in order to form a p-type ion implanting region for it to be activated by the processes of photoresist coating and drive-in diffusion to form NPN transistor base region (34), emitter region (35), and collector region (36) and also I2L NPN transistor emitter region (38), base region (37) and collector region resp.
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