发明名称 |
SEMICONDUCTOR THIN FILM AND PROCESS FOR FABRICATING THE SAME |
摘要 |
An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer (2) having a good surface flatness, and then an amorphous InP buffer layer (3) having a good surface flatness are formed on an Si substrate (1), and then an InP monocrystalline thin film (4) is grown on the InP buffer layer (3). GaAs has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced. |
申请公布号 |
EP0329400(B1) |
申请公布日期 |
1993.09.22 |
申请号 |
EP19890301423 |
申请日期 |
1989.02.15 |
申请人 |
OKI ELECTRIC INDUSTRY COMPANY, LIMITED |
发明人 |
HORIKAWA, HIDEAKI;AKIYAMA, MASAHIRO |
分类号 |
H01L21/20;H01L21/205;H01L31/18 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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