METHOD FOR VAPOR-PHASE GROWTH OF AN OXIDE THIN FILM

摘要

A substrate (11) to be deposited an oxide thin film thereon is set a reactor (10). An organic metal source gas and oxygen-containing gas are introduced into the reactor to pyrolyze, thereby depositing an oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas. In the deposition of a thin film, the organic metal source gas and oxygen-containing gas are alternately fed into the reactor (10).