| 摘要 |
PURPOSE:To facilitate taking out of light emission from the upper part so as to raise outside light emitting efficiency for obtaining a light emitting diode excellent in brightness by making a light emitting region of an active layer the part excepting that directly under the upper electrode. CONSTITUTION:A second conduction type current strictured layer 20 is formed on a first conduction type substrate 11 having difference in level 11a so as to be interrupted in the part of the difference in level 11a. Further thereon, a first conduction type carrier confining layer (clad layer) 12, an active layer 13, a second conduction type window layer (clad layer) 14 are formed while the second conduction type current-strictured layer 20 is continuously formed directly under the part of the upper electrode 17. Accordingly, a current is injected into the active layer 13 in the region excepting the part directly under the upper electrode 17 through the interrupted part of the second conduction type current-structured layer 20 formed on the substrate 11. Therefore, also a light emitting region of the active layer 13 comes to be the part directly under the upper electrode 17 thus facilitating it to take out light emission from the upper part for raising outer light emitting efficiency. |
