| 摘要 |
PURPOSE:To prevent the generation of resist residues after development without impairing sectional shapes and dimensional accuracy by exposing and developing a resist film via a mask on a substrate, then subjecting the resist film to additional exposing and developing. CONSTITUTION:A positive resist is applied on the surface of the substrate and is then baked to form the resist film 2 at a desired film thickness. The resist film 2 is subjected to UV ray exposing via the mask 3. The exposing time of the time is set at about 80% of the optimum values of the sensitivity and film thickness of the resist film 2. The resist film is thereafter developed with a prescribed developer. Since the exposing time is set slightly lower, the resist residues are generated on the substrate 1. The entire surface of the resist film 2 is then irradiated with the UV rays for a short period. The exposing time is set at about the difference between the optimum values of the photosensitivity and film thickness of the resist film 2 and the previous exposing time. The resist film is thereafter developed by the prescribed developer. The resist residues on the substrate 1 are annihilated such developing. Even more, the collapse of the sectional shape and the degradation in the dimensional accuracy in the resist patterns are obviated. |
