| 摘要 |
<p>PURPOSE:To prevent a radiation polymerization resist from being swollen by a method wherein a photographic plate is developed to its middle using a poor solvent, one part of a resist of an unexposed part is dissolved and removed in the thickness direction of the photographic plate and the residual unexposed resist is removed by plasma etching. CONSTITUTION:A resist 3 is applied to a light-shielding film 2, which is formed of chrome and a chromium oxide on a quartz substrate 1 by sputtering and a photographic plate for photomask use is obtained. This photographic plate is exposed with an electron beam and is half developed using a poor solvent, which dissolve resist 4 at a low solubility, as a developing solution. Then, the residual resist 3 is etched back with oxygen plasma to remove, the film 2 is etched using the resist 4 of exposing parts as masks, the resist 4 of the exposing parts is peeled and a mask is completed. Thereby, a radiation polymerization resist can be prevented from being swollen without extending its developing time.</p> |
