INSULATED-GATE FIELD-EFFECT TRANSISTOR,申请号JP19920042705-传众专利搜索

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发明名称	INSULATED-GATE FIELD-EFFECT TRANSISTOR
摘要
申请公布号	JPH05243261(A)	申请公布日期	1993.09.21
申请号	JP19920042705	申请日期	1992.02.28
申请人	NEC YAMAGATA LTD	发明人	SAITO YASUNOBU
分类号	H01L21/336;H01L29/78;(IPC1-7):H01L21/336;H01L29/784	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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