发明名称 Method and circuitry for decreasing the recovery time of an MOS differential voltage comparator
摘要 Method and circuitry for decreasing the recovery time of an MOS differential voltage comparator after an input voltage overdrive. At the beginning of a comparison cycle a reverse voltage is momentarily applied between the gates and sources of the input pair of source-coupled MOS transistors of sufficient magnitude to form a charge accumulation layer in the channel region of each of the transistors. Operating the differential voltage comparator in such manner substantially decreases the time required for the transistors to recover from an imbalance in their electrical characteristics caused by the input voltage overdrive.
申请公布号 US5247210(A) 申请公布日期 1993.09.21
申请号 US19910737558 申请日期 1991.07.26
申请人 CRYSTAL SEMICONDUCTOR 发明人 SWANSON, ERIC J.
分类号 H03F3/45;H03K5/24 主分类号 H03F3/45
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