| 摘要 |
PURPOSE:To control the quantity of doping of a very small quantity of nitrogen gas accurately, in an epitaxial device using a molecular beam for doping it with a nitrogen gas, using plasma. CONSTITUTION:An epitaxial device using a molecular beam for doping it with a nitrogen gas, using plasma is so constituted as to do vapor growth while exhausting this nitrogen gas from a quantity-of-supply controller 5 as shown by an arrow g inside a vacuum vessel 2 by branching one part of the rear stage. |
