| 摘要 |
<p>PURPOSE:To prevent damage of lead and generation of solder scrap, by applying solder plating harder than ordinary solder plating to the root and the tip of a lead, and cutting off the hard solder plating part of the tip before packaging. CONSTITUTION:Hard solder plated layers 21a, 21b whose hardness is larger than that of ordinary solder plating are formed in specified regions of the roots and the tips of the surfaces of a plurality of leads 2 protruding from a resin package 1 to the outside. An ordinary solder plated layer 22 is formed in the intermediate region except the specified regions of the root and the tip. In this state, an electric test is performed by bringing the tip of each lead 2 of a semiconductor device into contact with the electrode of a test equipment, and each of the lead 2 of the semiconductor device is worked into a specified shape. The region where the hard solder plated layer 21b of each lead of the semiconductor device is formed is cut off. Thereby damage of the lead 2 and generation of solder scrap can be prevented.</p> |
