| 摘要 |
PURPOSE:To selectively expose the surface of a conductor layer (including a semiconductor) covered with an insulating film by etching and to eliminate completely a natural oxide film and a surface layer which has damages and contains contamination etc., and which is formed on the exposed surface of the conductor layer before forming a film (including oxidization) to be connected to the exposed surface of the conductor layer. CONSTITUTION:An insulating film 3 is etched to form a contact hole which reaches a diffusion layer 2 formed on the surface of a silicon substrate 1. At that time, a surface layer 2a formed on the surface of the diffusion layer 2 is eliminated in a film forming equipment by using chlorine trifluoride gas. Then, in the same film forming equipment, a polycrystalline silicon film 4 is formed.
|
