| 摘要 |
PURPOSE:To improve rapid operativity by realizing a narrow region for injecting one dimensional carrier beyond limitations by lithography technique and by accordingly enabling traveling of carrier which gets near a quantum fine line. CONSTITUTION:Injection and traveling of carrier are made one dimension by providing an n-GaAs anode layer 2, an RTB layer 3, an n-GaAs cathode layer 4 which is a carrier injection layer and a WSi depleting electrode 8 which is applied to a side in the n-GaAs cathode layer 4 and generates a Schottky junction together with the n-GaAs cathode layer 4 to enlarge a depletion layer 9 inside the n-GaAs cathode layer 4. |
