发明名称 RETICLE FOR SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To provide a reticle capable of exposing without unfocusing even to a semiconductor substrate having a larger step difference than the depth of the focus of an exposer. CONSTITUTION:When a repeated pattern region 4 with a chromium film 2 and a chromium oxide film 3 and a peripheral circuit pattern region 5 are formed on a quartz substrate 1 to obtain a reticle for a semiconductor integrated circuit, a transparent film 7 is formed on the repeated pattern region 4. The optical path length of light passing the film 7, that is, the region 4 is made longer than that of light passing the region 5 and a focal plane on a semiconductor substrate is heightened.
申请公布号 JPH05241319(A) 申请公布日期 1993.09.21
申请号 JP19920008872 申请日期 1992.01.22
申请人 NEC CORP 发明人 NOZUE HIROSHI
分类号 G03F1/38;G03F1/68;H01L21/027 主分类号 G03F1/38
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