| 摘要 |
<p>PURPOSE:To obtain a gallium nitride semiconductor thin film, which is superior in surface smoothness and crystallinity, by a method wherein the interior of a thin film growing chamber is held in a high vacuum, the partial pressure of a carbon-containing compound is specified and ammonia gas or nitrogen trifluoride is fed as a nitrogen source. CONSTITUTION:A substrate 8 is heated to 1000 deg.C or higher and is set on a substrate heating holder in a vacuum container. Evaporation crucibles 2 with Ga put therein are heated and treated at 1000 deg.C or higher, whereby a degassing is previously performed and the partial pressure of carbon-containing impurities in the vacuum container is held at 10<78>Torr. In the introduction of ammonia gas or nitrogen trifluoride which is used as a nitrogen source, a cracking gas cell 6 whose inside is filled with alumina fibers is used, is heated to 600 deg.C and the gas is directly blown to the substrate 8. Thereby, a gallium nitride semiconductor thin film, which is superior in surface flatness and crystallinity, can be obtained.</p> |
