| 摘要 |
<p>PURPOSE:To provide a semiconductor light emitting diode of the double heterostructure having good luminous efficiency able to be manufactured with a simple manufacturing process without performing etching and twice crystal growth. CONSTITUTION:This light emitting diode has a double heterostructure where an active layer 4 is held between two clad layers 2, 3 of the p-n types formed inside a semiconductor laminated substrate 10, where a resist film 6 is formed in the central part above the semiconductor laminated substrate 10 and oxygen ions O<+> are implanted from thereabove for making the part excepting a light emitting part 4a of the active layer 4 high-resistant so as to form a current block layer 4b.</p> |
