发明名称 |
Method and apparatus for controlling the diameter of a silicon single crystal |
摘要 |
A method of controlling the diameter of a silicon single crystal. In the course of manufacturing a silicon single crystal by pulling the silicon single crystal while rotating it relative to a crucible, a comparison between a measured diameter value of the pulled single crystal measured by optical means and a desired diameter value is made to determine a deviation so that the resulting deviation is subjected to an incomplete differential PID processing or the Smith method processing to calculate a pull rate and the pull rate is applied to a motor controller of a crystal pulling apparatus thereby performing the diameter control of the pulled single crystal through the manipulation of the pull rate. An apparatus for controlling the diameter of a silicon single crystal includes input means for receiving a measured diameter value of a pulled single crystal measured by optical means, incomplete differential PID computing means for making a comparison between a measured diameter value of the pulled single crystal and a desired diameter value a plurality of times at intervals of a unit rotational period to calculate a pull rate, and output means for applying the pull rate to a motor controller of a crystal pulling apparatus.
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申请公布号 |
US5246535(A) |
申请公布日期 |
1993.09.21 |
申请号 |
US19920936071 |
申请日期 |
1992.08.26 |
申请人 |
NKK CORPORATION |
发明人 |
KAWASHIMA, AKIHIRO;SATO, TATSUO;OKAWA, TOSHIO |
分类号 |
G01B11/08 |
主分类号 |
G01B11/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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