| 摘要 |
<p>PURPOSE:To evaluate composition of an epitaxial crystal layer without damaging a wafer. CONSTITUTION:An n-type region 6 is provided on a part of a p-type substrate 1, semiconductor films 2,3 are epitaxially grown on the substrate with the n-type region provided, and then photo luminescent evaluation of the films epitaxially grown on the n-type region is performed. Therefore since photo luminescent light with sufficient intensity can be obtained from the semiconductor films formed on the n-type region, non-destructive composition evaluation by photo- luminescent spectroscopy is possible.</p> |
