| 摘要 |
<p>PURPOSE:To provide the method for correcting patterns which can form correction pattern films having more perpendicular side walls in the lacked part of a pattern film with good accuracy. CONSTITUTION:This method for correcting patterns which corrects the lacked part 7 of the pattern film 6 formed on a substrate 5 of an exposing mask consists in irradiating the central part region exclusive of the peripheral part region of the lacked part with an ion beam to previously form the first correction pattern film 9 of the film thickness smaller than the final film thickness, then irradiating the lacked part 7 including the first correction pattern film 9 with the ion beam to form the second correction pattern film 11 in such a manner that the film thickness of the correction pattern film 12 formed in the lacked part 7 attains the final film thickness.</p> |
