| 摘要 |
PURPOSE:To have a large area of a semiconductor junction part while having a highly minute light emitting device by forming a V-shaped groove on an insular part provided on a semiconductor substrate and covering an insular part excepting this V-shaped groove with an electrode. CONSTITUTION:An insular part I consisting of at least two layers 3, 4 of different conduction types is provided on a semiconductor substrate 1, and a V-shaped groove G is formed on this insular part I while covering an insular part excepting the V-shaped groove G with an electrode so that this V-shaped groove G may become a light take-out part. Thereby, light radiated near a semiconductor junction part is taken out from a V-shaped groove G part. In this case, since the insular part I is covered with an electrode excepting one side or an opposing side, a current flows ranging over the whole of the semiconductor junction part of the insular part I so as to have the strong luminous intensity. Further, an area of the semiconductor junction part can be made of a large area by shortening the length of the V-shaped groove G while making the insular parts I on both sides of the V-shaped groove G and making a light emitting device highly minute by intensifying luminous strength. |
