发明名称 TESTING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To solve problems of not only no normal burn-in test but also damage of a semiconductor device due to an increase in a thermal resistance when dusts exist between the device and a heat sink to deteriorate its contact. CONSTITUTION:A semiconductor device 2 is brought into contact with heat transfer device 4, and heat generated in the device 2 is transferred to a heat sink 1. The substance 4 is inserted before a burn-in test thereby to prevent a remarkable increase in the thermal resistance.</p>
申请公布号 JPH05243242(A) 申请公布日期 1993.09.21
申请号 JP19920031215 申请日期 1992.02.19
申请人 NEC CORP 发明人 MAEKAWA MASASHI
分类号 G01R31/26;H01L21/326;H01L21/66;H01L21/68;H01L21/683;(IPC1-7):H01L21/326 主分类号 G01R31/26
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