| 摘要 |
<p>PURPOSE:To materialize a low-resistance element capable of maintaining a high reflectivity by forming a first ring type metallic film on the upper part of a semiconductor light reflecting layer, and further, on the first metallic film, a second metallic film having a high light reflectivity, which is brought into contact with the upper part of the semiconductor reflecting layer. CONSTITUTION:On a crystal substrate 1, a first semiconductor light reflecting layer is formed. A second semiconductor light reflecting layer 6 is formed. A first ring type metal 8 of Cr/Au is vapor deposited on a p-type GaAs layer 7. Au is vapor deposited on the first ring metal 8 to form a second metal 14. With respect to the second semiconductor reflecting layer 6, the first ring type metal 8 and the second metal 14 of Au, Ag or the like which has a high reflectivity itself are formed on the upper part of the p-type GaAs layer 7. Thus, it is possible to curtail the semiconductor layer logarithm for the semiconductor light reflecting layer part constituting the complexly structured light reflecting structure, the first semiconductor reflecting layer 2 and the second semiconductor reflecting layer 2.</p> |
