| 发明名称 |
Method for making an improved high voltage thin film transistor having a linear doping profile |
| 摘要 |
An improvement in a self-passivated high voltage semiconductor device is set forth with a thinned SOI layer having a linear lateral doping region coated with an oxide layer and a field plate being a part of the gate electrode layer. A high voltage SOI semiconductor device is formed having freedom from external electric fields.
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| 申请公布号 |
US5246870(A) |
申请公布日期 |
1993.09.21 |
| 申请号 |
US19910811554 |
申请日期 |
1991.12.20 |
| 申请人 |
NORTH AMERICAN PHILIPS CORPORATION |
发明人 |
MERCHANT, STEVEN L. |
| 分类号 |
H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/423;H01L29/739;H01L29/78;H01L29/786;H01L29/861 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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