| 摘要 |
PURPOSE:To produce the titled film having excellent hardness and thermal conductivity with high film-forming speed at a low cost, by introducing a specific diamond-forming gas into a reaction chamber containing a substrate therein, thereby effecting the vapor-phase growth of a diamond on the surface of the substrate. CONSTITUTION:A substrate is placed in a reaction chamber such as quartz tube, etc. furnished with a high-frequency current coil wound round the quartz tube. A diamond-forming gas obtained by mixing 1mol of a hydrocarbon gas such as methane, etc. and 0.0001-2mol of an O2-containing gas, and if necessary, H2 gas, etc., is introduced into the reaction chamber, and a high-frequency current is passed through the gas by high-frequency plasma method to form a plasma space. The titled film having excellent film properties is grown on the surface of the substrate at a substrate temperature of 400-1,400 deg.C and a gas pressure of 10<-5>-100Torr. |
