| 摘要 |
PURPOSE:To improve element characteristics by heating a silicon substrate under an ultra-high vacuum and exposing the clean surface and obtaining the atomatically flat surface of a silicon. CONSTITUTION:In a method of forming a semiconductor heterojunction, a silicon substrate 10 is heated under an ultra-high vacuum and the clean surface is exposed, and the atomatically flat clean surface 12 is obtained. Then, a natural oxide film 16 is grown n the clean surface 12. Or, free bonds of the clean surface 12 of a silicon are terminated with a monovalent atom such as hydrogen so as not to rearrange surface atoms and the clean surface 12 of the silicon is passivated. Then, the atomatically flat interface is obtained by forming another substance by methods such as adsorption or deposition. Accordingly, an interface scattering of transit electrons or an electrical breakdown can be reduced. |
